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US 3,959,810 AGranted
Method for manufacturing a semiconductor device and the same
AssigneeHitachi, Ltd.
InventorTakanori Takeda
Life of this patent
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Abstract
A method for manufacturing a PNP type planar transistor, diffusing an acceptor impurity in a non-oxidizing atmosphere to form a P type emitter region in one portion of an N type base region with a first silicon oxide film as a selective mask, depositing a second silicon oxide film from vapor phase on the surface of said emitter region, diffusing selectively a donor impurity in another portion of said base region with said first and second silicon oxide films as selective masks thereby to form an N type highly doped region in said base region.
Claims2
A PNP semiconductor device comprising:
- a P-type collector region having a principal surface;
- an N-type base region having a principal surface;
- a PN junction formed between said collector region and said base region;
- a P type emitter region formed in one portion of the principal surface of said base region;
- an N type highly doped region formed in the other portion of the principal surface of said base region;
- a first silicon oxide film deposited from vapor phase to cover at least the surface of said P type emitter region;
- a second silicon oxide film thermally grown from the substrate to cover at least the surface of said base region;
- and
- an electrode fitted to the surface of said highly doped region.
6 more elements
A PNP semiconductor device comprising:
- a semiconductor substrate of P type silicon with a relatively low impurity concentration having one principal surface;
- a first N type diffused base region with a relatively low impurity concentration formed in said principal surface;
- a first P type diffused emitter region with a relatively high impurity concentration formed in one portion of the surface of said first N type diffused base region;
- a second N type diffused region with a relatively high impurity concentration formed in another portion of the surface of said first N type diffused base region;
- a first silicon oxide film deposited from vapor phase to cover the surface of said first P type diffused emitter region;
- a second silicon oxide film thermally grown from said substrate to cover said first N type diffused base region and the termination of the base-emitter junction;
- and
- a first and a second electrode fitted to the surfaces of said P type diffused emitter region and said second N type diffused region, respectively.
5 more elements
Dependencies are inferred from the claim text.