Novel process for producing a thin film of germanium
AssigneeGrumman Aerospace Corporation
InventorHerbert D. Kivlighn, Jr.
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Abstract
A process is disclosed for producing a thin film of elemental germanium on the surface of a germanate glass composition by means of a focused laser.
Claims10
A process for the preparation of a thin film of elemental germanium on the surface of a selected area of a germanate glass composition which includes at least 60 mole percent of germanium dioxide, said method consisting essentially of heating a selected area of said germanate glass composition with a laser beam of effective wave length and power in the presence of a reducing atmosphere until formation of said thin film of elemental germanium is complete.
A process for forming a semiconducting circuit pattern which consists essentially of selectively heating a germanate glass composition with a laser beam of effective wave length and power in the presence of a reducing atmosphere in a configuration that corresponds to said circuit pattern until said circuit pattern is formed.
A process for the preparation of a thin film of elemental germanium on the surface of a selected area of a germanate glass composition which includes at least 60 mole percent of germanium dioxide, said method consisting essentially of heating a selected area of said germanate glass composition with a laser beam in the presence of a reducing atmosphere until said selected area is heated to a temperature of 350.degree.-800.degree.C to cause formation of a thin film of elemental germanium.
Dependencies are inferred from the claim text.