Ion implanted resistor having controlled temperature coefficient and method
AssigneeSignetics Corporation
InventorHans H. Stellrecht
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Abstract
Ion implanted resistor having a semiconductor body of one conductivity type and having a planar surface with a region of opposite conductivity type formed in the semiconductor body which is defined by a PN junction extending to the surface. One portion of the region of opposite conductivity type in cross-section has a greater depth than the remaining portion whereby there is provided a resistance whose effective value is the value given by the parallel resistance of said one portion and the remaining portion to thereby provide a resistor having a controlled temperature coefficient.
Claims7
In a semiconductor structure having an ion implanted resistor formed therein with controlled temperature coefficient, a semiconductor body of one conductivity type and having a planar surface, a region of opposite conductivity type formed in the body by ion implantation and being defined by a PN junction extending to the surface and serving as a resistor, one portion of said region in cross-section having a greater depth than the remaining portion of the region whereby there is provided a resistor having a resistance whose effective value is given by the parallel resistance of said one portion and the remaining portion which has a controlled temperature coefficient.
Dependencies are inferred from the claim text.