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US 3,947,761 AGranted
Peak level indicator
AssigneeSony Corporation
InventorMichio Arai
Life of this patent
Estimating the term…
Abstract
A peak level indicator using a field effect transistor having a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion to form a capacitor, and a rectified input signal being applied to the second region. The peak level indicator is provided with a level meter indicating a current through the current path portion.
Claims13
A peak level indicator comprising:
- a. a charge storage semiconductor device including a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, said first region being capacitively coupled to said current path portion, and a control electrode connected to said second region;
- b. means for applying a current through said current path portion;
- c. an indicating means for indicating said current through said current path portion;
- and
- d. means for applying an input signal to said control electrode.
2 more elements
A peak level indicator adapted for utilizing a charge storage semiconductor device in an integrated circuit comprising:
- a. a charge storage junction semiconductor device having a charge storing PN junction, an input, and an output;
- b. a rectifying signal input means connected to said charge storage device input;
- c. current means connected to said output of the charge storage semiconductor device for producing a current which is controlled by said charge storage semiconductor device;
- and
- d. indicating means connected to said current means for displaying a current of said current means.
2 more elements
Dependencies are inferred from the claim text.