Preparation of indium phosphide
AssigneeBritish Secretary of State for Defence
InventorsPeter Jeremy Born, Daniel Stewart Robertson
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Abstract
A method of preparing III-V material which is or contains one of the compounds aluminum nitride, indium nitride, indium phosphide, gallium phosphide and gallium nitride involves directing a controlled gaseous flow of a hydride of nitrogen or phosphorus as appropriate, preferably ammonia or phosphine, into the vapour of a halide, preferably a chloride, of aluminum, indium or gallium as appropriate at a temperature below the decomposition temperature of the appropriate III-V material and collecting the III-V material formed by the reaction of the hydride and the halide.
Claims10
A method of preparing indium phosphide by reacting together a hydride of phosphorus with a halide of indium comprising the steps of providing a reflux vessel for establishing a liquid-vapour reflux, said vessel having a receptacle for collection of solid material formed by chemical reaction in the vapour of said reflux, introducing a charge of said halide into said vessel, heating said vessel to provide a continuous reflux of said halide, the temperature of the vapor of said halide in said reflux being in the inclusive range of from 400.degree. to 750.degree.C, directing a controlled gaseous flow containing said hydride at a flow rate in the inclusive rate of between 30 and 70 cm.sup.3 per minute into said halide vapour, and collecting the product of reaction between said halide vapour and said hydride on said receptacle.
Dependencies are inferred from the claim text.