Process of growing single crystals of gallium phosphide
AssigneeSemiconductor Research Foundation
InventorsJun-Ichi Nishizawa, Ken Suto, Yasuo Okuno
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Abstract
A single crystal of gallium phosphide including 0.5 atomic ratio or less of indium is grown from a melt consisting of indium, gallium and phosphorous with an atomic ratio of gallium to phosphorous equal to at least 2.0.
Claims3
A process of producing single crystals of substantially gallium phosphide from a melt containing indium as the solvent, which process comprising heating a mixture of indium, gallium and phosphorus to form a melt and thereafter slowly cooling the melt to room temperature, wherein the melt has an atomic ratio of gallium to phosphorus equal to at least 2.5 to produce said single crystals including at most 0.5 atomic percent of indium.
Dependencies are inferred from the claim text.