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US 3,946,428 AGranted
Encapsulation package for a semiconductor element
AssigneeNippon Electric Co., Ltd.
InventorsShinzo Anazawa, Seiichi Ueno, Isamu Nagasako, Tadashi Nawa, Toshiaki Irie, Shigeru Sando
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Abstract
A semiconductor package device characterized by improved operation at ultra-high frequencies and by improved heat dissipation, includes an auxiliary metal stud mounted on a metal substrate. A semiconductor element, such as a field-effect transistor or bipolar transistor, is mounted on the auxiliary stud and has at least one electrode thereof electrically connected to the stud.
Claims12
A semiconductor device comprising a metal substrate maintained at a constant voltage;
- first and second insulative segments disposed on a main surface of said metal substrate;
- an auxiliary metal stud mechanically mounted on and electrically connected to said main surface of said metal substrate at a position between said first and second insulative segments;
- a semiconductor element having a first, a second, and a third electrode, said semiconductor element being mounted onto said auxiliary metal stud;
- first and second electrode members formed respectively on said first and second insulative segments, said first and second electrode members being parallel with said main surface of said metal substrate and positioned at the opposing sides of said auxiliary metal stud so that said first electrode member, said auxiliary metal stud, and said second electrode member are arranged in a line;
- means for electrically connecting said first and second electrodes of said semiconductor element to said first and second electrode members, respectively;
- and means for electrically connecting said third electrode of said semiconductor element to said auxiliary metal stud;
- the height of said auxiliary metal stud being selected to shield electrostatically said first and second electrode members from each other.
4 more elements
Dependencies are inferred from the claim text.