Field effect transistor structure for minimizing parasitic inversion and process for fabricating
AssigneeInternational Business Machines Corporation
InventorsDavid DeWitt, William S. Johnson
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Abstract
A field effect transistor with spaced source and drain regions of a first type conductivity in a monocrystalline semiconductor body having a background impurity of a second opposite type conductivity, the improvement being a buried layer of a second type conductivity impurity having an average concentration higher than the impurity concentration of the background impurity that is located just beneath the insulating layer in the field regions of the device and at a greater depth in the gate region, the depth in the gate region being approximately equal to the thickness of the field insulating layer less the thickness of the gate insulating layer.
Claims6
A field effect transistor comprising spaced source and drain regions of a first type conductivity in a monocrystalline semiconductor body having a background impurity of a second opposite type conductivity,
- a field insulating layer on the surface of said body,
- a gate insulating layer over the region between said source and said drain regions,
- a layer of second type conductivity impurity having an average concentration significantly higher than the impurity concentration of said background impurity located in the body adjacent the interface of said field insulating layer and body, and located under the gate insulating layer at a depth approximately equal to the thickness of the field insulating layer less the thickness of the gate insulating layer.
Dependencies are inferred from the claim text.