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US 3,946,418 AGranted
Resistive gate field effect transistor
AssigneeGeneral Electric Company
InventorsRaymond A. Sigsbee, William D. Barber
Life of this patent
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Abstract
A resistive gate field effect transistor (FET) is disclosed in which the gate comprises a resistive film overlying an insulating layer and in contact with both the source and drain electrodes. This provides an integrated circuit, bidirectional voltage limiter in which the limiting voltage can be tailored to almost any value likely to be found on an integrated circuit. In another form of the present invention, a conductive gate is added between the resistive gate and the substrate.
Claims12
A constant voltage load comprising:
- a semiconductor substrate of a first conductivity type;
- first and second regions of an opposite conductivity type formed in said substrate;
- insulating means overlying the area on said substrate between said first and second regions;
- resistive gate means overlying said insulating means and in electrical contact with said first and second regions.
1 more element
Dependencies are inferred from the claim text.