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US 3,946,417 AGranted
Minimizing cross-talk in L.E.D. arrays
AssigneeIBM Corporation
InventorsWilliam N. Jacobus, Jr., San-Mei Ku
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor light emitting diode (LED) array in which "cross-talk" between adjacent diodes in the array is minimized. The disclosed LED arrays have an absorbing layer on the backside of the devices and/or a guard ring region surrounding each device in order to absorb spurious reflections within the semiconductor crystal. Disclosed also is a method of making improved light emitting diodes (LED's).
Claims11
An array of closely spaced light emitting devices comprising:
- a semiconductor substrate including materials from the Group III-V elements and doped with an impurity of a first conductivity type;
- a thin layer of silicon oxide material in adherent contact with a first major surface of said substrate;
- a layer of silicon nitride material in adherent contact with selected portions of said silicon oxide;
- an impurity of a second conductivity type being introduced into said substrate through said silicon oxide layer as masked by the said layer of silicon nitride material forming a P-N junction;
- and
- a light absorbing layer formed by said impurity of said second conductivity type being also introduced into a second major surface, contiguous with the entire second major surface of said substrate.
3 more elements
An array of closely spaced light emitting devices comprising:
- a semiconductor substrate consisting of a mixed compound from the Group III-V elements and doped with impurities of a first conductivity type;
- a thin layer of silicon oxide material in adherent contact with a first major surface of said substrate;
- a layer of silicon nitride material in adherent contact with selected portions of said silicon oxide;
- an impurity of a second conductivity type being introduced into said substrate through said silicon oxide layer as masked by the said layer of silicon nitride material forming a pluraity of P-N junctions;
- and
- a light absorbing layer formed by said impurity of said second conductivity type being also introduced into a second major surface of said substrate.
3 more elements
An array of closely spaced light emitting devices comprising:
- a semiconductor substrate having two major surfaces and including material from the Group III-V elements and doped with an impurity of a first conductivity type;
- a layer of silicon oxide in adherent contact with at least a first one of said major surfaces;
- a layer of silicon nitride, with selective openings etched therein, in adherent contact with said silicon oxide;
- an impurity of a second conductivity type being selectively introduced through the silicon oxide and through said selective openings into said at least first major surface of said substrate, forming P-N junctions and the light emitting devices;
- and
- a light absorbing layer contiguous with the entire second major surface of said substrate.
3 more elements
Dependencies are inferred from the claim text.