Microwave solid state circuit employing a bipolar transistor structure

A microwave solid state circuit comprising:

• a bipolar transistor structure having a base region, an emitter region and a collector region;
• first means coupled to said base region and said emitter region to apply a radio frequency input signal and a first bias voltage across the emitter-base junction so that current modulated at the frequency of said input signal is injected into said collector region;
• second means coupled to said base region and said collector region for reverse biasing the collector-base junction;
• and
• third means coupled to said base region and said collector region for loading the collector-base junction such that said circuit operates as a selected one of an oscillator injection locked by said input signal and an amplifier of said input signal;
• said collector region operating in an Impatt mode, and
• said collector region including a semiconductor material of higher energy gap than the semiconductor material of said base region.

A microwave solid state circuit comprising:

• a bipolar transistor structure having a base region, an emitter region and a collector region;
• first means coupled to said base region and said emitter region to apply a radio frequency input signal and a first bias voltage across the emitter-base junction so that current modulated at the frequency of said input signal is injected into said collector region;
• second means coupled to said base region and said collector region for reverse biasing the collector-base junction;
• and
• third means coupled to said base region and said collector region for loading the collector-base junction such that said circuit operates as a selected one of an oscillator injection locked by said input signal and an amplifier of said input signal;
• said collector region operating in an Impatt mode, and
• said emitter region and said collector region both including a semiconductor material of higher energy gap than the semiconductor material of said base region.

A microwave solid state circuit comprising:

• a bipolar transistor structure having a base region, an emitter region and a collector region;
• first means coupled to said base region and said emitter region to apply a radio frequency input signal and a first bias voltage across the emitter-base junction so that current modulated at the frequency of said input signal is injected into said collector region;
• second means coupled to said base region and said collector region for reverse biasing the collector-base junction;
• and
• third means coupled to said base region and said collector region for loading the collector-base junction such that said circuit operates as a selected one of an oscillator injection locked by said input signal and an amplifier of said imput signal;
• said collector region operating in a transferred electron mode, and
• said emitter region including a semiconductor material of higher energy gap than the semiconductor material of said base region.