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AssigneeFerranti Limited
InventorsDavid Latham Grundy, Kenneth Lawson Hughes
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A semiconductor device having a plurality of constituent components within a semiconductor body such that the device in combination with one of a plurality of different possible metallisation patterns of conductors forms a desired circuit arrangement, is provided in a semiconductor body having a epitaxial layer of one conductivity type on a substrate of the same conductivity type and suitable to be employed as a conductive plane, and is manufactured by a method which includes the diffusion step of providing simultaneously within the epitaxial layer regions of opposite conductivity type of the constituent components of the device and a network of conductive tracks, it being possible, for example, for the device to include bipolar transistors of the so-called collector-diffusion-isolation construction or isoplanar construction.
A semiconductor device having a plurality of constituent components, a plurality of different possible metallisation patterns of conductors for interconnecting said components in a desired functional circuit arrangement, a semiconductor body having a substrate of one conductivity type forming a conductive plane in the device, an epitaxial layer on the substrate of the same conductivity type including a plurality of diffused regions of opposite type including a plurality of diffused regions of opposite conductivity type and a plurality of unmodified regions forming the constituent components of the device, a diffused network of conductive tracks of said opposite conductivity type, said diffused network of conductive tracks being remote from the conductive plane and said metallisation patterns of conductors being disposed on said epitaxial layer and being connected to the conductive plane via at least one unmodified region and to the components and the conductive tracks to form the desired functional circuit arrangement.
A semiconductor device comprising a semiconductor body having a substrate of one conductivity type adapted to form a conductive plane, an epitaxial layer of the same conductivity type on said substrate, said layer including a first plurality of unmodified regions and a second plurality of unmodified regions of said one conductivity type extending through the epitaxial layer and being contiguous with the substrate, spaced heavily doped regions of opposite conductivity type at the interface between the substrate and the epitaxial layer, a plurality of diffused regions of opposite conductivity type within said semiconductor body, a diffused network of conductive tracks adjacent to the surface of the epitaxial layer remote from the conductive plane, said doped layers, said first plurality of unmodified regions and said plurality of diffused regions forming a plurality of isolated components and a metallisation pattern of conductors on said epitaxial layer connecting said components, conductive tracks and, via said second plurality of unmodified regions, the conductive plane in a functional circuit arrangement.
A semiconductor device comprising a semiconductor body having a substrate of one conductivity type adapted to form a conductive plane, an epitaxial layer on said substrate of the same conductivity type, a plurality of spaced heavily doped layers of opposite conductivity type each provided at a portion of the interface between the substrate and the epitaxial layer, said epitaxial layer including a first plurality of unmodified regions, and of said one conductivity type, contiguous with the conductive plane and extending through the epitaxial layer, at least one second unmodified region also of said one conductivity type, a plurality of diffused regions of said opposite conductivity type, and adjacent to the surface of the epitaxial layer remote from the conductive plane a diffused network of conductive tracks of said opposite conductivity type, said plurality of heavily doped layers, said first plurality of unmodified regions and said plurality of diffused regions forming at least partially a plurality of components isolated from each other within the semiconductor body, and a metallisation pattern of conductors on said epitaxial layer connecting in a functional circuit arrangement said components, conductive tracks and, via said unmodified region, the conductive plane.
Dependencies are inferred from the claim text.