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US 3,945,030 AGranted
Semiconductor structure having contact openings with sloped side walls
AssigneeSignetics Corporation
InventorAlan Seales
Life of this patent
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AssigneeSignetics Corporation
InventorAlan Seales
Estimating the term…
Semiconductor structure having a semiconductor body with a planar surface. At least one region having an impurity therein is formed in the body and extends to the surface. A layer of insulating material is provided on the surface. Openings are formed in the layer of insulating material and expose said surface. The openings are defined by inclined side walls which extend at an angle with respect to said surface of less than 70.degree.. Contact means is carried by the surface and extends through the opening to form contact with the region. At least portions of the contact means have a slope which conforms generally to the slope of the side walls. In the method, two materials are utilized in which one material has an appreciably higher etch rate than the other material so that a slope is provided on the material having the lower etch rate.
In a semiconductor structure, a semiconductor body having a planar surface, at least one region having an impurity therein formed in said body and defined by a PN junction extending to said surface, a layer of insulating material formed on said surface and covering said junction, said layer of insulating material having an opening therein and exposing said surface in an area overlying said region, said opening being defined exclusively by planar inclined side walls in said layer of insulating material having a positive slope extending at an angle of less than 70.degree. with respect to said surface, and contact means carried by said semiconductor body and extending through said opening to contact said region and completely covering said surface and said inclined side walls and, having a slope in the opening which does not differ significantly from the slope of the inclined side walls to provide a contact which is substantially free of cracks.
In a semiconductor structure, a semiconductor body of one conductivity type and having a planar surface, at least one region of opposite conductivity type formed in said body and being defined by a PN junction extending to said surface, a first layer of a first material having a first etch rate formed on said surface and a second layer of a second material having a second etch rate formed on said surface, said second etch rate beng substantially greater than said first etch rate, said first and second layers having openings in general registration with each other, said openings in said first layer being defined by planar inclined side walls forming an angle of less than 70.degree. with respect to said surface, said openings in said second layer being defined by planar side walls which extend at an angle substantially greater than the angle at which the inclined side walls of the first layer extend.
In a semiconductor structure:
Dependencies are inferred from the claim text.