Quasi-optical integrated circuits
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsHarold Jacobs, Metro M. Chrepta
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AssigneeThe United States of America as represented by the Secretary of the Army
InventorsHarold Jacobs, Metro M. Chrepta
Estimating the term…
A quasi-optical integrated circuit which makes use of a high resistivity k single crystal intrinsic semiconductor as a low loss quasi-optical wave transmission medium for millimeter and submillimeter waves having one or more circuit elements or devices disposed either at or near the surface of a portion of the semiconductor, or formed within a portion of either the semiconductor transmission medium or a portion of a high resistivity single crystal intrinsic semiconductor appendage to said semiconductor transmission medium. By varying the potential applied to said elements or devices, one can control either the phase or the amplitude of quasi-optical wave propagation along the semiconductor waveguide; moreover, solid state devices such as quasi-optical generators, mixers and detectors can be formed within the semiconductor wave transmission medium itself. Quasi-optical generators also can be obtained by inserting a negative resistance device in an aperture disposed within a cavity resonator which is made of a material of high dielectric constant and high resistivity.
In combination, a quasi-optical energy waveguide consisting entirely of a bulk single crystal intrinsic semiconductor waveguiding medium of high resistivity for propagating millimeter and submillimeter wave energy in the fundamental mode, at least one electrical circuit element disposed at a portion of said medium, and wave energy propagation control means including means for supplying a unidirectional forward biasing voltage to said element for controlling the propagation through said medium of said wave energy in response to conductivity variations produced within said portion of said medium.
In combination, a waveguiding medium for propagating quasi-optical wave energy, an appendage mounted on a portion of said medium, said waveguiding medium and said appendage each consisting entirely of a bulk single crystal intrinsic semiconductor of high resistivity and high dielectric constant, at least one electric circuit element formed within said appendage and wave energy propagation control means including means for supplying a unidirectional voltage to said element for controlling the propagation through said medium of said wave energy in response to conductivity variations produced within said appendage.
Dependencies are inferred from the claim text.