Semiconductor device and method of manufacture therefor

A method of manufacture for a semiconductor device comprising the steps of:

• diffusing impurities into a silicon semiconductor chip through photolithographic techniques, wherein said diffusing step leaves said chip coated with silicon dioxide;
• forming contact windows in said silicon dioxide so as to expose the underlying silicon at selected areas;
• coating said silicon dioxide and the peripheral portions of said selected areas with a barrier layer of pyrolytic silicon nitride;
• forming platinum silicide on the remaining exposed portions of said silicon and forming metallic electrical contacts on the platinum silicide;
• forming a layer of low-temperature silicon dioxide on said silicon nitride and said contacts;
• depositing a layer of glass on said layer of low-temperature silicon dioxide, said glass being deposited by the substeps of:
• depositing a first layer of particulate glass and applying heat to cause fusion;
• and
• depositing a second layer of particulate glass and applying heat to cause fusion;
• and
• forming openings in said glass and said low temperature silicon oxide to provide access to said contacts.