Low interelectrode leakage structure for charge-coupled devices

In a charge-coupled device having a semiconductor substrate, a layer of insulation covering said substrate, a plurality of spaced-apart electrodes formed from a doped polycrystalline semiconductor material on said layer of insulation and having a particular conductivity type, and regions of polycrystalline semiconductor interelectrode material located between said plurality of spaced-apart electrodes, and means connected to said electrodes for forming a spatially defined depletion region in said substrate beneath said electrodes and for transferring charge from one location to another in said depletion region, the improvement comprising:

• said polycrystalline semiconductor interelectrode material contains a dopant which gives to said polycrystalline semiconductor interelectrode material a conductivity type opposite to said particular conductivity type.