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OwnerJames C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher, Joseph Maserjianinventors
Estimating the term…
Trap densities in dielectric films can be determined by tunnel injection measurements when the film is incorporated in an insulated-gate field-effect transistor (IGFET). Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.
A method of determining trap densities in a dielectric film comprised of the steps of
Apparatus for determining trap densities in a dielectric film, where said dielectric film is incorporated as an insulator between a layer of metal and a semiconductor substrate, and where the resulting metal-insulator-semiconductor structure is incorporated in an insulated-gate, field-effect transistor by using said metal layer as a gate electrode, and providing spaced apart ohmic contacts to regions doped opposite to said semiconductor substrate to serve as source and drain contacts, said apparatus comprising
Dependencies are inferred from the claim text.