Logic circuit arrangement employing insulated gate field effect transistors

A logic circuit arrangement comprising:

• a plurality of logic circuits, outputs of at least two preceding logic circuits being coupled to inputs of a succeeding logic circuit;
• a source of first and second clock pulses;
• each of said at least two preceding logic circuits including first and second power supply terminals, a first output terminal, at least one first input terminal for receiving a data input signal, a first insulated gate field effect transistor of a first channel type having gate, source and drain electrodes, the source-drain path of said first insulated gate field effect transistor being coupled between said first power supply terminal and said first output terminal and the gate electrode of said first insulated gate field effect transistor being coupled to receive a first clock pulse, and at least one second insulated gate field effect transistor of a second channel type having gate, source and drain electrodes, the source-drain path of said at least one second insulated gate field effect transistor being coupled between said first output terminal and said second power supply terminal and the gate electrode of said at least one second insulated gate field effect transistor being coupled to said at least one first input terminal;
• said succeeding logic circuit comprising third and fourth power supply terminals, a second output terminal, at least two second input terminals coupled to said first output terminals of said at least two preceding logic circuits, respectively, a third insulated gate field effect transistor of said first channel type having gate, source and drain electrodes, the source-drain path of said third insulated gate field effect transistor being coupled between said third power supply terminal and said second output terminal, and the gate electrode of said third insulated gate field effect transistor being coupled to receive a second clock pulse, and at least two fourth insulated gate field effect transistors of said second channel type each having gate, source and drain electrodes, the source-drain paths of said at least two fourth insulated field effect transistors being coupled between said second output terminal and said fourth power supply terminal, and the gate electrodes of said at least two fourth insulated gate field effect transistors being coupled to said second input terminals, respectively;
• said clock pulse source providing said first and second clock pulses each of which has a first voltage level period and a second voltage level period following said first voltage level period, the first voltage level period of said first and second clock pulses starting at the same time and the first voltage level period of the second clock pulse being longer than that of the first clock pulse to thereby render a conducting period of said third transistor longer than that of said first transistor;
• and
• means for supplying third and fourth clock pulses which are respectively complementary to said first and second clock pulses, to said second and fourth power supply terminals, respectively.