Combined electron beam semiconductor modulator and junction laser
AssigneeThe United States of America as represented by the Secretary of the Army
InventorMortimer H. Zinn
Life of this patent
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Abstract
A combined pulse modulated laser in which a modulated cold cathode device is utilized to excite a combined electron beam bombarded semiconductor device grown integrally with a crystal laser to achieve modulation of the laser output with fast rise and fall times under low voltage and high current conditions.
Claims8
A pulse modulated laser comprising a semiconductor device having a portion thereof bombarded by an electron beam and a semiconductor laser diode grown on said semiconductor device to form a monolithic PNNP structure, said laser diode responding to current flowing within said semiconductor device during beam bombardment thereof.
Dependencies are inferred from the claim text.