Method for producing highly pure silicon
AssigneeSiemens Aktiengesellschaft
InventorsHans Stut, Gerhard Barowski
Life of this patent
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Abstract
A method for producing highly pure silicon, or another semiconductor material, includes depositing the element from a corresponding reaction gas at the surface of several rod shaped carrier members composed of highly pure material, the carrier members being connected in series and permeated by a heating current supplied by an operational current source. In heating the serially connected carrier members, the members are first preheated by the application of a high voltage from a three phase supply, the carrier members being subdivided into groups with each group charged by a separate phase of the three phase voltage. Preheating is performed prior to connecting all of the carrier members to the operational supply.
Claims6
A method for the production of highly pure silicon by depositing silicon from a corresponding reaction gas on the outer surface of silicon rod-shaped carrier members which are heated in the reaction gas to the depositing temperature, comprising the steps of simultaneously preheating the members to a predetermined temperature by connecting separate groups of carrier members to separate phases of an n-phase electrical supply, where n is an integer larger than two;
- and heating the carrier members to the depositing temperature by connecting the carrier members, contemporaneously with their group phase connections, in series and connecting the series to a heating current source.
Dependencies are inferred from the claim text.