Method of manufacturing light sensitive heterodiode
AssigneesHitachi, Ltd., Nippon Hoso Kyokai
InventorsYasuo Tanaka, Hideaki Yamamoto, Keiko Ooki, Naohiro Goto, Toru Takigawa
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Abstract
A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.
Claims20
A method of manufacturing a light sensitive element comprising forming an n-type transparent conductive layer on a transparent substrate, the surface of said n-type layer defining microprotrusions, and forming a p-type photoconductive layer on the n-type transparent conductive layer to form a rectifying contact therewith, said process characterized in that said n-type transparent layer is subjected to plasma etching to remove at least 100 A of said n-type transparent layer and thereby smooth said microprotrusions before the p-type photoconductive layer is deposited thereon and in that the p-type photoconductive layer is a layer of a material whose main component is a chalcogenide containing selenium.
A process for manufacturing a light sensitive element, comprising (a) forming an n-type transparent conductive layer on a transparent substrate by means of vacuum evaporation, chemical vapor deposition, pyrolytic decomposition or rf sputtering, said n-type transparent conductive layer being formed of a polycrystal having a grain size of the order of from several hundred to several thousand A and a microscopically rough surface defined by a plurality of microprotrusions, (b) subjecting said n-type layer to plasma etching to remove at least 100 A of said n-type layer and thereby smooth the surface of said n-type layer, and thereafter (c) coating said n-type transparent conductive layer with a p-type photoconductive layer of a material whose main component is chalcogenide containing selenium.
Dependencies are inferred from the claim text.