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US 3,941,624 AGranted
Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy
AssigneeBell Telephone Laboratories, Incorporated
InventorAlfred Yi Cho
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Abstract
In order to insure that the doping profiles of Sn-doped Group III(a)-V(a) Ga-containing layers grown by molecular beam epitaxy follow relatively closely the time-intensity profile of the dopant beam, the substrate temperature should not exceed about 550.degree.C.
Claims5
A molecular beam epitaxy technique for fabricating layers of Ga-containing Group III(a)-V(a) compounds with abrupt doping profiles which follow relatively closely the time-intensity profile of a dopant beam, comprising the steps of:
- a. placing a substrate in an evacuable chamber;
- b. reducing the background pressure in the chamber to a subatmospheric pressure;
- c. preheating said substrate to a temperature in the range of about 450.degree. to 650.degree.C,
- d. directing at least one molecular beam containing Ga and the other constituents of said compound at said substrate for a time period effective to grow said layer to a desired thickness;
- e. during step (d) directing another molecular beam containing a dopant at said substrate to produce a predetermined doping profile in said layer;
- CHARACTERIZED IN THAT:
- 1. said dopant is Sn;
- 2. said substrate temperature is maintained in the range of about 450.degree. and 550.degree.C so that surface segregation effects of Sn atoms/molecules are alleviated and said doping profile substantially follows the time-intensity profile of said another beam of step (e).
5 more elements
Dependencies are inferred from the claim text.