Electrophotographic photoconductive member employing a chalcogen alloy and a crystallization inhibiting element
AssigneeCanon Kabushiki Kaisha
InventorsHiroshi Hanada, Nobuo Kitajima, Tatsuo Masaki
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Abstract
An electrophotographic photosensitive member having a photosensitive layer containing an amorphous alloy comprising at least one of the chalcogen elements and at least one element from group IVa of the Periodic Table. This photosensitive layer can be sensitized by adding an element from group Va of the Periodic Table or a halogen thereto.
Claims6
An electrophotographic photoconductive member characterized by having as a photoconductive layer an amorphous alloy consisting essentially of chalcogen elements selected from the group consisting of Se-Te and Se-Te-S, and at least one crystallization inhibiting element selected from the group consisting of silicon and germanium in an amount of 10 wt % or less based on the chalcogen elements, wherein said photoconductive layer has a volume resistivity of more than 10.sup.12 .OMEGA.-cm. in the dark.
An electrophotographic photoconductive member, comprising an electrically conductive support layer, a photoconductive layer thereon and an electrically insulating layer on said photoconductive layer forming a basic construction, wherein at least one of the layers sandwiching the photoconductive layer is transparent to radiations to which the photoconductive layer is sensitive, said photoconductive layer being composed of an amorphous alloy consisting essentially of chalcogen elements selected from the group consisting of Se-Te and Se-Te-S, and at least one crystallization inhibiting element selected from the group consisting of silicon and germanium in an amount of 10 wt. % or less based on the chalcogen elements, wherein said photoconductive layer has a volume resistivity of more than 10.sup.12 .OMEGA.-cm. in the dark.
Dependencies are inferred from the claim text.