Method of fabricating ion implanted znse p-n junction devices
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsYoon Soo Park, Bok Kyoon Shin
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Abstract
Light emitting diodes, switching diodes with memory, and backward diodes are fabricated by phosphorus ion implantation of a p-n semiconductor junction in aluminum doped zinc selenide substrate material.
Claims5
A method of fabricating a P-N junction device in an aluminum doped n-type ZnSe single crystal having a first (110) plane surface and a second (110) plane surface comprising the steps of:
- a. heat treating the said crystal in molten zinc for approximately 24 hours at approximately 900.degree.C;
- b. implanting a p-type layer on the said first surface by directing a phosphorus ion beam having an energy within the range from 70 to 500 keV on the said first surface providing a dosage from 10.sup.16 to 10.sup.14 per square centimeter;
- c. annealing the said crystal at a temperature within the range from approximately 400.degree. centigrade to approximately 650.degree. centigrade for approximately five to ten minutes;
- d. depositing a gold electrical contact on the said implanted p-type layer;
- and
- e. ultrasonic soldering an indium electrical contact to the said second surface.
A method of fabricating a P-N junction semiconductor device in an aluminum doped n-type ZnSe single crystal having a first (110) plane surface and a second (110) plane surface comprising the steps of:
- a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900.degree.C;
- b. mechanically polishing the said first surface;
- c. etching both the said first and second surfaces in two parts H.sub.2 SO.sub.4 and three parts K.sub.2 Cr.sub.2 O.sub.7 for approximately one minute at a temperature within the range of 70.degree.C to 90.degree.C;
- d. rinsing the said crystal in approximately 25 percent by weight solution of boiling NaOH for approximately twenty seconds;
- e. rinsing the said crystal in boiling trichloroethylene;
- f. rinsing the said crystal in acetone;
- g. rinsing the said crystal in boiling methanol;
- h. rinsing the said crystal in deionized water;
- i. implanting a p-type layer on the said first surface at room temperature by directing a phosphorus ion beam having an energy level within the range of 70 keV to 500 keV with dosages within the range from 10.sup.16 to 10.sup.14 per square centimeter;
- j. annealing the said crystal at a temperature within the range of 400.degree. centigrade to 650.degree. centigrade for a time within the range of five to ten minutes;
- k. depositing a gold electrical contract on the said implanted p-type layer on the first surface by sputtering or evaporation;
- and
- l. ultrasonic soldering an indium electrical contact to the said second surface.
A method of fabricating an electroluminescent semiconductor P-N junction diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 10 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of:
- a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900.degree.C providing a carrier concentration per cubic centimeter of approximately 10.sup.17, and an ohm-cm resistivity of approximately 0.10;
- b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 400 keV on the said first surface providing a dosage of approximately 10.sup.14 per square centimeter;
- c. annealing the said crystal at a temperature of approximately 450.degree.C to 500.degree.C in argon gas at atmospheric pressure for approximately 5 minutes;
- d. depositing a gold electrical contact on the said implanted p-type layer;
- and
- e. ultrasonic soldering an indium electrical contact to the said second surface.
A method of fabricating a switching with memory P-N junction diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 10 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of:
- a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900.degree.C providing a carrier concentration per cubic centimeter of approximately 10.sup.18, and an ohm-cm resistivity of approximately 0.01;
- b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 90 keV on the said first surface providing a dosage of approximately 10.sup.16 per square centimeter;
- c. annealing the said crystal at a temperature of approximately 500.degree.C for 5 minutes in air;
- d. depositing a gold electrical contact on the said implanted p-type layer;
- and
- e. ultrasonic soldering an indium electrical contact to the said second surface.
A method of fabricating a P-N junction backward diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 1000 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of:
- a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900.degree.C providing a carrier concentration per cubic centimeter of approximately 10.sup.19, and an ohm-cm resistivity of approximately 0.001;
- b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 90 keV on the said first surface providing a dosage of approximately 10.sup.16 per square centimeter;
- c. annealing the said crystal at a temperature of approximately 600.degree.C in argon gas at atmospheric pressure for approximately 10 minutes;
- d. depositing a gold electrical contact on the said implanted p-type layer;
- and
- e. ultrasonic soldering an indium electrical contact to the said second surface.
Dependencies are inferred from the claim text.