Semiconductor device
AssigneeU.S. Philips Corporation
InventorDaniel Diguet
Life of this patent
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Abstract
A semiconductor device having a monocrystalline semiconductor layer provided on a surface comprising at least one region obtained by diffusion of a doping impurity whose width from the surface of the semiconductor layer in the direction of the substrate first increases and than decreases while the chemical composition of the semiconductor layer on the substrate side differs from that at the surface.
Claims20
A semiconductor device comprising a substrate, a monocrystalline semiconductor layer disposed on said substrate and comprising at least one semiconductor circuit element, said semiconductor layer having a first part located at the substrate side of said layer and a second part located at the surface of said layer, said first part comprising semiconductor material differing in chemical composition from that of said second part, said layer further comprising at least one region that is doped with a diffused impurity material and has a width dimension that first locally increases and then decreases in the direction from the surface of said semiconductor layer toward said substrate.
A method of manufacturing a semiconductor device comprising the steps of providing a monocrystalline substrate, depositing an epitaxial semiconductor layer on said substrate, with the proviso that during said depositing step the composition of the depositing material is varied at least temporarily, and then locally diffusing a doping impurity from the surface of said epitaxially deposited layer at least down to a depth where the material composition of said layer varies.
Dependencies are inferred from the claim text.