Junction target monoscope
AssigneeRaytheon Company
InventorAmos Picker
Life of this patent
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Abstract
A signal display system having a visual display and a display signal generator in which a semiconductor junction target has a high conductivity P layer, a low conductivity N layer, and a surface layer of insulating material having holes in the shape of letters or other characters. The target semiconductor junction is reverse biased so that when an electron beam striking the target is scanned over the character apertures, it will produce carrier multiplication in the target and an output signal several orders of magnitude greater than a conventional monoscope. The same principle may be used for a camera pickup tube when beam electrons returning from a light sensitive target are multiplied on striking a reverse biased junction target.
Claims4
A signal generating device comprising:
- an evacuated envelope;
- a source of electrons positioned within said envelope;
- a body comprising silicon semiconductor material spaced from said source within said envelope, said body having at least one junction therein providing a lower resistance to charge carrier flow in the forward direction than in the reverse direction;
- said junction comprising a layer of P-type semiconductor material diffused into an N-type region of said semiconductor material and extending substantially continuously across the surface of said semiconductor body facing said source of electrons;
- said P-type layer having substantially less resistivity than said N-type region of said semiconductor material;
- means producing charge carrier flow in said semiconductor material comprising electrodes contacting said semiconductor body on the opposite sides of said junction and means directing a beam of electrons from said source toward said junction;
- means interposed between said source and said junction for varying the number of electrons of said beam striking said junction;
- and said means for varying said portion of electrons comprising a layer of insulating material impervious to penetration of electrons from said beam and having apertures therein through which electrons from said beam pass with sufficient velocity to produce charge carrier multiplication in said semiconductor material.
Dependencies are inferred from the claim text.