Target structure for electronic storage tubes of the coplanar grid type having a grid structure of at least one pedestal mounted layer

An electronic storage tube having a target structure including first means substantially unaffected by ionizing radiation which is present during operation of the tube for significantly improving the image retention time of the target structure wherein said tube comprises:

• second means including means for generating an electron beam for applying a signal to the target structure to establish a desired stored charge distribution on the target structure representative of the image to be stored;
• third means for detecting the stored charge distribution established on the target structure and wherein said first means comprises a pattern of conducting and insulating areas, said conducting areas being electrically connected to each other to form a conducting member having at least one planar surface;
• said insulating areas being formed of a plurality of layers of insulating materials placed on the top surface of said conducting member;
• said conducting member comprising a continuous layer having first and second planar surfaces and having openings therein;
• each of said insulating layers having first and second planar surfaces;
• first and second surfaces of a first one of said insulating layers being respectively in contact with the bottom surface of said conducting layer and the first surface of another one of said insulating layers;
• the insulating layer furthest removed from the conducting member having its first surface in contact with the second surface of the next adjacent insulating layer;
• portions of the first surface of said first one of said insulating layers being positioned across said openings and constituting the surface areas for receiving said stored charge patterns;
• all of said layers being arranged to overlie portions of said conducting member planar surface while the remaining portions of said conducting member planar surface are exposed to said electron beam;
• at least one of said insulating layers being formed of an insulating material whose conductivity is unaffected by the presence of ionizing radiation to aid in preventing the transfer of charge stored on the stored charge surface to significantly increase image retention time;
• at least said one layer in contact with the conducting member forming pedestals for insulating its associated charge storage surface from said conducting member;
• said pedestals having cross-sections smaller than their charge storage surfaces whereby the pedestals prevent the transfer of charge from the charge storage surface to said conducting member.

An electronic storage tube having a target structure including first means substantially unaffected by ionizing radiation which is present during operation of the tube for significantly improving the image retention time of the target structure wherein said tube comprises:

• second means including means for generating an electron beam for applying a signal to the target structure to establish a desired stored charge distribution on the target structure representative of the image to be stored;
• third means for detecting the stored charge distribution established on the target structure and wherein said first means comprises a pattern of conducting and insulating areas, said conducting areas being electrically connected to each other to form a conducting member having at least one planar surface;
• said insulating areas being formed of first and second layers of insulating materials placed upon a first planar surface of said conducting member;
• each of said layers having first and second planar surfaces, the first planar surface of a first one of said layers being in contact with the planar surface of the conducting member and the second planar surface of said one of said layers being in contact with the first planar surface of the second one of said layers;
• the second planar surface of the second insulating layer which is furthest removed from said conducting member constituting the surface for storing the charge pattern;
• said layers being arranged to overlie portions of said conducting member planar surface while the remaining portions of said conducting member planar surface are exposed to said electron beam;
• the insulating layer furthest removed from said conducting member being silicon dioxide;
• the layer in contact with the conducting member forming pedestals for insulating said stored charge surface from said conducting member;
• said pedestals having cross-sections smaller than said stored charge surfaces whereby the pedestals aid in preventing the transfer of charge from the stored charge surface to said conducting member, and said pedestals being formed from an insulating material chosen from the group of materials including silicon nitride, aluminum oxide and silicon oxy-nitride, which materials have a conductivity which is substantially unaffected by the presence of ionizing radiation to still further prevent the transfer of charge stored on the stored charge surface thereby significantly increasing image retention time.

An electron storage tube having a target structure including first means substantially unaffected by ionizing radiation which is present during operation of the tube for significantly improving the image retention time of the target structure wherein said tube comprises:

• second means including means for generating an electron beam for applying a signal to the target structure to establish a desired stored charge distribution on the target structure representative of the image to be stored;
• third means for detecting the stored charge distribution established on the target structure and wherein said first means comprises a pattern of conducting and insulating areas, said conducting areas being electrically connected to each other to form a conducting member having at least one planar surface;
• said insulating areas being formed of first and second layers of insulating materials placed upon a first planar surface of said conducting member;
• each of said layers having first and second planar surfaces, the first planar surface of a first one of said layers being in contact with the planar surface of the conducting member and the second planar surface of said one of said layers being in contact with the first planar surface of the second one of said layers;
• the second planar surface of the second insulating layer which is furthest removed from said conducting member constituting the surface for storing the charge pattern;
• said layers being arranged to overlie portions of said conducting member planar surface while the remaining portions of said conducting member planar surface are exposed to said electron beam;
• the insulating layer furthest removed from said conducting member being formed of an insulating material whose conductivity is substantially unaffected by the presence of ionizing radiation to prevent the transfer of charge stored on the stored charge surface to significantly increase image retention time, the insulating material being chosen from the group of materials including silicon nitride, aluminum oxide and silicon oxy-nitride;
• said one layer in contact with the conducting member forming pedestals for insulating its associated charge storage surface from said conducting member;
• said pedestals being formed of silicon oxide and having cross-sections smaller than their stored charge surfaces whereby the pedestals further aid in preventing the transfer of charge from the stored charge surface to said conducting member.