Process for depositing the deposition agent on the surface of a number of semiconductor substrates
AssigneeHitachi, Ltd.
InventorsNoboru Ryugo, Keizo Inaniwa, Akira Sugiyama
Life of this patent
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Abstract
A novel process for depositing and diffusing an impurity on and into the surface of a number of semiconductor wafers placed in parallel on a quartz boat. The impurity source is formed as a plurality of long and slender bars or a unitary tunnel-shaped element or a plurality of tunnel segments obtained by cutting the element apart. The impurity source as described above is mounted about the periphery of the semiconductor wafers arranged in a row on a quartz boat for reducing the consumption of the impurity source.
Claims14
A process for diffusing an impurity into a semiconductor wafer comprising:
- placing a plurality of semiconductor wafers upright on a boat,
- placing a plurality of impurity sources so as to surround and be closely spaced from said wafers,
- placing said boat into one end of an elongated tube,
- discharging air within said tube from the other end of said tube to thereby establish a vacuum or reduced air atmosphere in said tube, and
- heating said semiconductor wafers and impurity sources in said tube to thereby produce a gaseous oxide from said impurity within said tube and diffuse said impurity into said semiconductor wafers.
A process for diffusing an impurity into a semiconductor wafer comprising:
- placing a plurality of semiconductor wafers on a boat, said semiconductor wafers being arranged transversely with respect to the longitudinal direction of said boat,
- arranging a plurality of elongated impurity sources longitudinally with respect to said boat so that said impurity sources longitudinally extend past the outer peripheries of a plurality of semiconductor wafers, said impurity sources being closely spaced from the outer peripheries of said semiconductor wafers, said impurity sources being supported by said boat,
- placing said boat in an elongated tube, and
- heating said elongated tube to produce a gaseous oxide of said impurity within said tube and diffuse said impurity into said semiconductor wafers.
Dependencies are inferred from the claim text.