Electronic shutter for a charge-coupled imager
AssigneeTexas Instruments Incorporated
InventorJohn Millard Caywood
Life of this patent
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AssigneeTexas Instruments Incorporated
InventorJohn Millard Caywood
Estimating the term…
The disclosure relates to a system for controlling the total charge collected on a charge-coupled imager to, in effect, provide an electronic shuttering action for the charge-coupled imager. The charge-coupled imager works in standard fashion and is normally biased into depletion whereby minority carriers, generated by the light impinging on the imager, are collected in predetermined charge collecting areas or wells, the charges in each well then bring read out in a serial fashion. In order to prevent collection of an excess number of charges, which is equivalent to overexposure in a photographic sense, the majority carriers which are necessarily generated simultaneously with the minority carriers, are collected and integrated so that when a predetermined amount of charge is measured, a shuttering action can take place. When the basic imager is formed from p-type silicon, the majority carrier charges are collected by providing an ohmic contact to the p-type substrate. Two modes ofoperation are disclosed. The first mode is suitable for imaging applications and the second mode is suitable for laser warning receivers.
An electronic shutter for a charge-coupled imager which comprises, in combination:
An electronic shutter for a charge-coupled imager having a substrate of semiconductor material of predetermined conductivity type, an insulation layer on one surface thereof, and a plurality of spaced transfer electrodes disposed on said insulation layer, such that radiation incident on said imager causes generation of minority carrier-majority carrier pairs in said substrate for storage of minority-carrier charge beneath said transfer electrodes during an integration period, said electronic shutter comprising:
An electronic shutter for a charge-coupled imager having a substrate of semiconductor material of predetermined conductivity type, an insulation layer on one surface thereof, and a plurality of spaced transfer electrodes disposed on said insulation layer, said electronic shutter comprising:
In a charge coupled device imager which comprises, in combination, a substrate of semiconductor material of predetermined conductivity type, an insulating layer on a surface of said substrate, and plural transfer electrodes over said insulating layer such that radiation incident on said imager causes generation of minority-carrier majority-carrier pairs in said substrate for storage of minority-carrier charge beneath said transfer electrodes during an integration period:
In a charge coupled device imager which comprises, in combination, a substrate of semiconductor material of predetermined conductivity type, an insulating layer on a surface of said substrate, and plural transfer electrodes over said insulating layer such that radiation incident on said imager causes generation of minority carrier majority carrier pairs in said substrate for storage of minority-carrier charge beneath said transfer electrodes during an integration period:
Dependencies are inferred from the claim text.