Semiconductor die package and methods of manufacturing

A semiconductor die package, comprising:

• a lower substrate;
• a first integrated circuit die connected to the lower substrate;
• a second integrated circuit die connected to the lower substrate adjacent to the first integrated circuit die;
• an upper substrate above the first integrated circuit die and above the second integrated circuit die;
• a first connection structure outside a first top-view perimeter of the first integrated circuit die, outside a second top-view perimeter of the second integrated circuit die, and inside a third top-view perimeter of the lower substrate,
• wherein the first connection structure between electrically conductive traces of the lower substrate and electrically conductive traces of the upper substrate;
• and
• a second connection structure inside the second top-view perimeter of the second integrated circuit die, inside the third top-view perimeter of the lower substrate, and outside the first top-view perimeter of the first integrated circuit die,
• wherein the second connection structure is between a row of electrically-isolated pad structures above an upper surface of the second integrated circuit die and pad structures of the upper substrate.

A semiconductor die package, comprising:

• a seed layer;
• a first pad structure on a first portion of the seed layer;
• a connection structure on a second portion of the seed layer laterally spaced from the first portion of the seed layer, wherein the connection structure comprises a pillar structure;
• a first integrated circuit die over the first pad structure, wherein a bonding film layer is between the first integrated circuit die and the first pad structure;
• and
• a second integrated circuit die laterally between the first pad structure and the connection structure,
• wherein the second integrated circuit die is laterally spaced from the connection structure and the first integrated circuit die.