Semiconductor devices having aligned front-end interface contacts and back-end interface contacts, and associated systems and methods
AssigneeMicron Technology, Inc.
InventorsChin Hui Chong, Hari Giduturi, Yeon-Chang Hahm
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Abstract
Semiconductor devices, such as memory devices, and associated systems and methods, are disclosed herein. A representative memory device includes a substrate including circuitry, back-end contacts electrically coupled to the circuitry, and front-end contacts. The front-end contacts are configured to receive electrical signals from an external device via a front-end interface. Individual ones of the front-end contacts are electrically coupled to and aligned along an axis with corresponding ones of the back-end contacts.
Claims20
A memory die, comprising:
- a substrate including circuitry;
- back-end contacts electrically coupled to the circuitry;
- front-end contacts configured to receive electrical signals from an external device via a front-end interface, wherein individual ones of the front-end contacts are electrically coupled to corresponding ones of the back-end contacts
- a first redistribution structure electrically coupling the front-end contacts to the corresponding ones of the back-end contacts;
- and
- a second redistribution structure electrically coupling the back-end contacts to the circuitry.
A memory device, comprising:
- a plurality of memory dies arranged in a stack, wherein each of the memory dies comprises
- a substrate including circuitry;
- first back-end contacts electrically coupled to the circuitry;
- second back-end contacts electrically coupled to the circuitry;
- first front-end contacts, wherein individual ones of the first front-end contacts are electrically coupled to corresponding ones of the first back-end contacts;
- second front-end contacts, wherein individual ones of the second front-end contacts are electrically coupled to corresponding ones of the second back-end contacts;
- a first redistribution structure electrically coupling the first and second front-end contacts to the corresponding ones of the first and second back-end contacts;
- and
- a second redistribution structure electrically coupling the first and second back-end contacts to the circuitry.
- first bond wires bonded to the first front-end contacts of at least one of the memory dies, wherein the first bond wires are configured to receive first electrical signals from an external device via a front-end interface;
- second bond wires bonded to the second front-end contacts of at least one of the memory dies, wherein the second bond wires are configured to receive second electrical signals from the external device via the front-end interface;
- and
- third bond wires bonded to and extending between the second back-end contacts of adjacent ones of the memory dies in the stack.
A method of forming a memory device, comprising:
- forming circuitry on a substrate;
- forming back-end contacts over the substrate and electrically coupled to the circuitry;
- forming front-end contacts over the substrate, wherein individual ones of the front-end contacts are electrically coupled to corresponding ones of the back-end contacts
- forming a first redistribution structure to electrically couple the front-end contacts to the corresponding ones of the back-end contacts;
- and
- forming a second redistribution structure electrically couple the back-end contacts to the circuitry.
Dependencies are inferred from the claim text.