Semiconductor structure and method for producing same

A method of producing a semiconductor structure, the method comprising the steps of:

• preparing two composite substrates that are each temporarily fixed on a temporary fixing substrate and comprise two-dimensionally arranged plural silicon dies and an organic gap fill material filled between the plural silicon dies;
• obtaining a laminated body X1 by hybrid-bonding, either directly or via another layer, the plural silicon dies of the two composite substrates that are each temporarily fixed on a temporary fixing substrate;
• removing a temporary fixing substrate on one side of the laminated body X1 and thereby exposing a composite substrate on the one side to obtain a laminated body X2;
• and
• removing a temporary fixing substrate on another side of the laminated body X2 to obtain a semiconductor structure.

A method of producing a semiconductor structure, the method comprising the steps of:

• preparing a semiconductor substrate comprising a semiconductor substrate main body, a semiconductor substrate bonding layer that is arranged on the semiconductor substrate main body and comprises an insulating layer and an electrode, and a through electrode;
• preparing at least two composite substrates that are each temporarily fixed on a temporary fixing substrate and comprise two-dimensionally arranged plural silicon dies and an organic gap fill material filled between the plural silicon dies;
• pasting a first composite substrate onto the semiconductor substrate bonding layer of the semiconductor substrate, hybrid-bonding the semiconductor substrate and the plural silicon dies of the first composite substrate, and then peeling off the temporary fixing substrate from the first composite substrate to expose the plural silicon dies;
• and
• where n is defined as an integer of 1 or larger, performing operations of pasting and hybrid-bonding an (n+1)th composite substrate onto an nth composite substrate on the semiconductor substrate bonding layer of the semiconductor substrate either directly or via another layer, and then peeling off the temporary fixing substrate from the (n+1)th composite substrate and thereby exposing the plural silicon dies, the operations being sequentially performed for integers from 1 to n to obtain a semiconductor structure.

A method of producing a semiconductor structure, the method comprising the steps of:

• preparing a semiconductor substrate comprising a semiconductor substrate main body, a semiconductor substrate bonding layer that is arranged on the semiconductor substrate main body and comprises an insulating layer and an electrode, and a through electrode;
• two-dimensionally arranging and hybrid-bonding plural silicon dies on the semiconductor substrate bonding layer of the semiconductor substrate, and then filling gaps between the plural silicon dies with an organic gap fill material to form a first composite substrate;
• and
• where n is defined as an integer of 1 or larger, performing operations of two-dimensionally arranging and hybrid-bonding plural silicon dies onto an nth composite substrate on the semiconductor substrate bonding layer of the semiconductor substrate either directly or via another layer, and then filling gaps between the plural silicon dies with an organic gap fill material to form an (n+1)th composite substrate, the operations being sequentially performed for integers from 1 to n to obtain a semiconductor structure.