Method of filling gaps between dies using silicon dioxide
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang CHANG, Kuang-Wei CHENG, Ku-Feng YANG
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Abstract
A method of forming an IC structure includes bonding a first die to a first side of a substrate and bonding a second die to the first side of the substrate. The second die is adjacent to the first die and a gap is defined between the first and second dies. The method includes forming a first dielectric layer (DL) over the first and second dies and in the gap, forming a first opening in the first DL in the gap, forming a second DL over the first DL and in the first opening. The first DL includes a higher film stress in absolute value than the second DL.
Claims20
An integrated circuit structure, comprising:
- a first die bonded to a first side of a first substrate;
- a dummy die bonded to the first side of the first substrate, a space 16 being defined between the first die and the dummy die;
- and
- a gap-fill structure in a space between the first die and the dummy die, the gap-fill structure comprising a plurality of dielectric layers filling the space, the plurality of dielectric layers including a bottommost dielectric layer and other dielectric layers, wherein the bottommost dielectric layer has a higher film stress in absolute value than the other dielectric layers individually.
An integrated circuit structure, comprising:
- a first die bonded to a first side of a semiconductor substrate;
- a second die bonded to the first side of the semiconductor substrate, the second die being adjacent to the first die and a space is defined between the first die and second die;
- a first dielectric layer over the first and second dies and in the space, the first dielectric layer having a first opening in the space;
- and
- a second dielectric layer over the first dielectric layer and in the first opening, the second dielectric layer having a second opening in the space,
- wherein the first dielectric layer is thicker than the second dielectric layer in the space.
A method of forming an integrated circuit structure, the method comprising:
- bonding a first die to a first side of a semiconductor substrate;
- bonding a second die to the first side of the semiconductor substrate spaced from the first die defining a gap;
- and
- forming a gap-fill structure in the gap, the gap-fill structure including a first dielectric layer and at least one other dielectric layer,
- wherein forming the gap-fill structure comprises:
- forming the first dielectric layer over the first and second dies and in the gap,
- forming a first opening in the first dielectric layer in the gap, and
- forming the at least one other dielectric layer over the first dielectric layer and in the first opening, where an opening is formed in the at least one other dielectric layer before forming a subsequent layer,
- wherein the first dielectric layer comprises a higher film stress in absolute value than the other dielectric layers in the gap-fill structure.
Dependencies are inferred from the claim text.