Semiconductor device with reduced warpage
AssigneeSamsung Electronics Co., Ltd.
InventorsGyuseong PARK, Joongwon SHIN, Dae-Gwon HA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a substrate; a first via penetration the substrate; a second via penetrating the substrate; and an insulating pattern surrounding the first via and the second via, in which the insulating pattern comprises a first portion between the first via and the second via, the first portion comprises a first pattern portion and a second pattern portion overlapping the first pattern portion, and a width of the first pattern portion is smaller than a width of the second pattern portion.
Claims20
A semiconductor device comprising:
- a substrate;
- a first via penetrating the substrate;
- a second via penetrating the substrate;
- and
- an insulating pattern surrounding the first via and the second via,
- wherein the insulating pattern comprises a first portion between the first via and the second via,
- wherein the first portion comprises a first pattern portion and a second pattern portion overlapping the first pattern portion, and
- wherein a width of the first pattern portion is smaller than a width of the second pattern portion.
A semiconductor device comprising:
- a substrate;
- a first via penetrating the substrate;
- a second via penetrating the substrate;
- and
- an insulating pattern surrounding the first via and the second via,
- wherein the insulating pattern comprises a first portion between the first via and the second via,
- wherein the first portion comprises a first pattern portion and a second pattern portion overlapping the first pattern portion,
- wherein the second pattern portion comprises a first part, a second part and a third part,
- wherein the second part of the second pattern portion overlaps the first pattern portion,
- wherein the first part and the third part of the second pattern portion are spaced apart from each other,
- wherein the second part of the second pattern portion is between the first part and the third part, and
- wherein a level of a surface of the first pattern portion is lower than a level of a surface of the first part of the second pattern portion and a level of a surface of the third part of the second pattern portion.
A semiconductor device comprising:
- a substrate;
- a first via penetrating the substrate;
- a second via penetrating the substrate;
- an insulating pattern on a surface of the substrate, and surrounding the first via;
- and
- an insulating layer on the substrate,
- wherein the insulating pattern comprises a first portion between the first via and the second via,
- wherein the first portion comprises a first pattern portion and a second pattern portion overlapping the first pattern portion, and
- wherein the first pattern portion protrudes from the second pattern portion.
Dependencies are inferred from the claim text.