US 2026/0314474 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device including a first semiconductor die, a second semiconductor die, thermal silicon substrates and an encapsulation is provided. The second semiconductor die is disposed on and electrically connected to the first semiconductor die. The thermal silicon substrates are disposed on the first semiconductor die, wherein the thermal silicon substrates are spaced apart from the second semiconductor die. The encapsulation is disposed on the first semiconductor die. The encapsulation encapsulates the second semiconductor die and the thermal silicon substrates. The encapsulation includes a filling material layer and an insulator, wherein the filling material layer is disposed on the first semiconductor die and located between the second semiconductor die and thermal silicon substrates, and the filling material layer is spaced apart from the second semiconductor die and the thermal silicon substrates by the insulator.

Claims20

Dependent claims

A semiconductor device, comprising:

a first semiconductor die;
a second semiconductor die disposed on and electrically connected to the first semiconductor die;
dummy dies disposed on the first semiconductor die;
an encapsulation disposed on the first semiconductor die, and the encapsulation comprising:
a first encapsulation portion disposed on the first semiconductor die, wherein from a top view of the semiconductor device, the first encapsulation portion comprises strip segments extending between the dummy dies;
and
a second encapsulation portion surrounding the second semiconductor die, wherein the first encapsulation portion is spaced apart from the second semiconductor die and the dummy dies by the second encapsulation portion.

4 more elements

A semiconductor device, comprising:

a first semiconductor die comprising a first bonding structure;
a second semiconductor die disposed on the first bonding structure of the first semiconductor die, the second semiconductor die comprising a second bonding structure interfacing the first bonding structure;
dummy dies disposed on the first bonding structure of the first semiconductor die, wherein the dummy dies are arranged to surround the second semiconductor die;
an encapsulation disposed on first bonding structure of the first semiconductor die, the encapsulation encapsulating the second semiconductor die and the dummy dies, wherein the encapsulation comprises a first encapsulation portion interfacing first sidewalls of the dummy dies and a second portion interfacing second sidewalls of the dummy dies and sidewalls of the second semiconductor die.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20