Interposer via interconnect shapes with improved performance characteristics and methods of forming the same

A method of forming an interposer, the method comprising:

• forming a first dielectric layer;
• forming a second dielectric layer on the first dielectric layer;
• forming a line-shaped via in the second dielectric layer;
• and
• forming a second metal trace on the second dielectric layer such that the second metal trace is connected to the line-shaped via and a bottommost surface of the second metal trace directly contacts an uppermost surface of the second dielectric layer.

A method of forming a redistribution layer structure, the method comprising:

• forming a line-shaped opening in a dielectric layer such that the line-shaped opening has one of an L-shape, a U-shape, an H-shape or a rectangular ring shape in a top-down view;
• depositing a metal material on the dielectric layer and in the line-shaped opening to form a line-shaped via in the line-shaped opening;
• and
• patterning the metal material to form a metal trace on the dielectric layer such that the metal trace is integrally formed with the line-shaped via and a bottommost surface of the metal trace directly contacts an uppermost surface of the dielectric layer.