Integrated circuit device and method of fabrication

An integrated circuit device comprising:

• a die;
• an interconnect at least partially overlapping the die;
• and
• a plurality of bumps in a region where the interconnect overlaps the die, wherein:
• the interconnect includes at least a first conductive layer and a second conductive layer, the plurality of bumps includes at least a first bump and a second bump, which are spaced apart in a first direction,
• each of the first and second conductive layers includes signal and ground conductors in a region between the first bump and the second bump, and
• each signal conductor in each of the first and second conductive layers in the region between the first bump and the second bump is entirely vertically overlapped in the first direction by a ground conductor in one of the first or second conductive layers.

A method of fabricating an integrated circuit device, the method comprising:

• forming an interconnect that includes at least a first conductive layer and a second conductive layer, wherein:
• forming the first and second conductive layers of the interconnect includes forming a plurality of signal conductors between a first bump location for a first bump and a second bump location for a second bump, and forming a plurality of ground conductors between the first bump location and the second bump location,
• forming the plurality of signal conductors and the plurality of ground conductors includes forming each signal conductor of the plurality of signal conductors to be between a corresponding pair of ground conductors in the corresponding conductive layer, and
• forming the plurality of ground conductors includes continuously coupling the plurality of ground conductors within each of the first and second conductive layers from a first side of the plurality of signal conductors to a second side of the plurality of signal conductors;
• and
• mounting a die to the interconnect with a plurality of bumps in a region where the interconnect overlaps the die, the plurality of bumps including the first bump and the second bump.