US 2026/0314440 A1 · HIGH-DENSITY INTERCONNECT REGION WITH MIXED BUMP WIDTHS

Abstract

Microelectronic components and assemblies that have a high-density interconnect region with mixed bump widths may enable wafer sort-on-solder techniques with lower die area requirements and with improved power delivery to a high-density interconnect region. In one example, a microelectronic assembly includes two dies stacked over and coupled with one another and a plurality of conductive interconnects including a solder material (e.g., solder bumps/joints) between and coupled with the dies, where the plurality of conductive interconnects include first conductive interconnects with a first width and second conductive interconnects with a second with that is greater than the first width, and where the second conductive interconnects are coplanar and interleaved with the first conductive interconnects.

Claims20

Dependent claims

A microelectronic assembly, comprising:

a first die;
a second die over and bonded with the first die;
and
a plurality of coplanar interconnects comprising a solder material, wherein the plurality of coplanar interconnects are between and coupled with the first die and the second die, and wherein the plurality of coplanar interconnects comprises:
a first interconnect with a first width,
a second interconnect with the first width, and
a third interconnect between the first interconnect and the second interconnect, wherein the third interconnect has a second width that is greater than the first width.

4 more elements

Dependencies are inferred from the claim text.

High-density interconnect region with mixed bump widths

Life of this patent

High-density interconnect region with mixed bump widths

Life of this patent

Abstract

Claims20