Semiconductor Structures And Methods Of Forming The Same

A semiconductor structure, comprising:

• a first passivation structure over a substrate;
• and
• a conductive feature extending over the first passivation structure;
• and
• a second passivation structure surrounding the conductive feature, wherein the conductive feature comprises:
• a bottom surface,
• a top surface, and
• a sidewall surface connecting the bottom surface and the top surface, wherein the sidewall surface comprises a lower part and an upper part, wherein an angle formed between the lower part of the sidewall surface and the bottom surface is a first obtuse angle, an angle formed between the upper part of the sidewall surface and the top surface is a second obtuse angle, and an angle formed between the upper part of the sidewall surface and the lower part of the sidewall surface is a third obtuse angle.

A semiconductor structure, comprising:

• a lower contact feature in a dielectric layer;
• a metal-insulator-metal (MIM) capacitor disposed over the dielectric layer and comprising a vertical stack of conductor plates;
• a first passivation structure disposed over the MIM capacitor;
• a conductive feature electrically coupled to the lower contact feature, wherein the conductive feature comprises a first portion extending through the first passivation structure and a second portion over the first passivation structure,
• wherein, in a cross-sectional view, a shape of the second portion of the conductive feature comprises a substantially barrel shape.