Capacitor cell regions, semiconductor device including same and methods of manufacturing same

A method of manufacturing a semiconductor device, the method comprising:

• forming an array of capacitor cell regions (cap cells), the cap cells including one or more first cap cells and one or more second cap cells;
• and
• the forming an array of cap cell regions including:
• in a first metallization (M_1st) layer, forming M_1st segments including:
• depositing a first layer of metallic first material as a precursor to the M_1st segments;
• etching the first layer resulting in:
• first strips of the first material extending in a first direction and having a first pitch relative to a perpendicular second direction;
• and
• each of the first strips substantially having a first width and a substantially uniform first gap therebetween relative to the first direction;
• for each cap cell, etching the first strips to produce the M_1st segments so that:
• each cap cell having a first quantity, and a substantially uniform physical arrangement, of corresponding ones of the M_1st segments;
• relative to the second direction, outermost ones of the M_1st segments being adjacent to corresponding external second and third gaps, each of the second and third gaps being larger than the first gap, and opposite first and second boundaries of the cap cell correspondingly being in the third and fourth gaps;
• and
• relative to the first direction, opposing third and fourth boundaries of each cell being proximal correspondingly to (i) substantially aligned first ends of one or more of the M_1st segments and (i) substantially aligned second ends of one or more of the M_1st segments;
• and
• for each of the cap cells, coupling the M_1st segments correspondingly to a first voltage or a second voltage such that:
• each of the first cap cells providing substantially a first capacitance;
• each of the second cap cells providing substantially a non-zero second capacitance different than the first capacitance;
• and
• electrical arrangements of the M_1st segments being different for the second cap cells than for the first cap cells.

A semiconductor device comprising:

• in a first metallization (M_1st) layer, M_1st segments extending in a first direction and having a first pitch, wherein relative to a second direction perpendicular to the first direction, each of the M_1st segments substantially having a first width and a substantially uniform first gap therebetween,
• in a second metallization (M_2nd) layer, M_2nd segments extending in a third direction and having a second pitch, wherein, relative to a fourth direction perpendicular to the third direction, each of the M_2nd segments substantially having a second width;
• and
• capacitor cell regions (cap cells) arranged in an array and including one or more first cap cells and one or more second cap cells, wherein each cap cell having (i) a first quantity, and a substantially uniform physical arrangement, of corresponding ones of the M_1st segments and (ii) a second quantity of corresponding ones of the M_2nd segments;
• and
• wherein, for each of the cap cells, couplings (A) between the M_1st segments and correspondingly a first voltage or a second voltage and (B) between the M_2nd segments and correspondingly the first voltage or the second voltage being arranged such that:
• each of the first cap cells providing substantially a first capacitance;
• and
• each of the second cap cells providing substantially a non-zero second capacitance different than the first capacitance;
• wherein electrical arrangements of the M_1st segments being different for the second cap cells than for the first cap cells;
• and
• wherein, for each of the cap cells:
• first ends of odd ones and second ends of even ones of the M_1st segments aligning substantially and correspondingly to each other and being proximal correspondingly to opposite first and second boundaries of the cap cell;
• and
• relative to the second direction, opposite third and fourth boundaries of the cap cell being in corresponding external second and third gaps proximal to corresponding outermost ones of the M_1st segments;
• each of the second and third gaps being larger than the first gap.