Interconnect structure pattern
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Chiang KUO, Guan Yu CHEN, Hsin-Liang CHEN
Life of this patent
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Abstract
The present disclosure describes a structure with a substrate, a circuit element, a first metallization layer, and a second metallization layer. The circuit element is formed on the substrate. The first metallization layer is disposed over the substrate and includes a first metal line electrically connected to the circuit element and first dummy metal lines extending along a first direction. The second metallization layer is disposed directly above the first metallization layer and includes a second metal line electrically connected to the first metal line and second dummy metal lines extending along a second. The second direction is perpendicular to the first direction.
Claims20
A structure, comprising:
- a first metallization layer disposed over a substrate and comprising:
- a first metal line;
- and
- first dummy metal lines extending along a first direction and electrically isolated from the first metal line;
- and
- a second metallization layer disposed above the first metallization layer and comprising:
- a second metal line;
- and
- second dummy metal lines above the first dummy metal lines and electrically isolated from the first metal line, the second metal line, and the first dummy metal lines, wherein one or more of the second dummy metal lines comprise a concave portion, a void structure, or combinations thereof, and wherein the second dummy metal lines extend along a second direction perpendicular to the first direction.
A structure, comprising:
- a first metallization layer above a substrate and comprising:
- a first metal line;
- and
- first dummy metal lines extending along a first direction and electrically isolated from the first metal line, wherein one or more of the first dummy metal lines comprise a concave portion, a void structure, or combinations thereof;
- and
- a second metallization layer above the first metallization layer and comprising:
- a second metal line;
- and
- second dummy metal lines above the first dummy metal lines and electrically isolated from the second metal line and the first dummy metal lines, wherein one or more of the second dummy metal lines comprise the concave portion, the void structure, or combinations thereof, and wherein the second dummy metal lines extend in a second direction perpendicular to the first direction.
A method, comprising:
- forming first metal lines above a substrate;
- forming second metal lines above the first metal lines;
- forming, between the first metal lines, first dummy metal lines that extend along a first direction;
- and
- forming, between the second metal lines, second dummy metal lines above and isolated from the first dummy metal lines, wherein one or more of the second dummy metal lines comprise a concave portion, a void structure, or combinations thereof, and wherein the second dummy metal lines extend along a second direction perpendicular to the first direction.
Dependencies are inferred from the claim text.