Conductive structure in semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCai-Ling WU, Hsiu-Wen HSUEH, An-Jiao FU, Chii-Ping CHEN, Jen-Hung WANG
Life of this patent
Estimating the term…
Abstract
A semiconductor structure and methods for manufacturing the semiconductor structure are provided. The semiconductor structure includes an aluminum-containing layer, and a carbon-containing dielectric layer formed over the aluminum-containing layer. The semiconductor structure further includes a first conductive via formed in the carbon-containing dielectric layer, and a first barrier layer sandwiched between the first conductive via and the carbon-containing dielectric layer. In addition, both the first conductive via and the first barrier layer comprise first dopants.
Claims20
A semiconductor structure, comprising:
- an aluminum-containing layer;
- a carbon-containing dielectric layer formed over the aluminum-containing layer;
- a first conductive via formed in the carbon-containing dielectric layer;
- and
- a first barrier layer sandwiched between the first conductive via and the carbon-containing dielectric layer,
- wherein both the first conductive via and the first barrier layer comprise first dopants.
A semiconductor structure, comprising:
- a first aluminum-containing layer, a first etch stop layer, and a first carbon-containing dielectric layer sequentially stacked over a substrate;
- and
- a first metal line and a first conductive via formed in the first carbon-containing dielectric layer, wherein the first metal line comprises a periphery region and a middle region surrounded by the periphery region, an atomic concentration of first dopants in the periphery region is greater than an atomic concentration of the first dopants in the middle region.
A method for manufacturing a semiconductor structure, comprising:
- forming an aluminum-containing layer;
- forming a carbon-containing dielectric layer over the aluminum-containing layer;
- forming a first via opening and a second via opening in the carbon-containing dielectric layer, wherein a first portion of the carbon-containing dielectric layer is laterally sandwiched between the first via opening and a second via opening;
- etching the first via opening and the second via opening and an upper portion of the first portion of the carbon-containing dielectric layer to deepen the first via opening and the second via opening and to form a line trench by performing a first etching process;
- and
- forming a conductive structure in the first via opening, the second via opening, and the line trench.
Dependencies are inferred from the claim text.