Via structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Chieh Hsiao, Liang-Wei Wang, Dian-Hau Chen
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Abstract
A via structure, a semiconductor structure, and methods for forming the via structure and the semiconductor structure are presented. A via structure includes a first conductive portion through an interconnect structure, a second conductive portion through a substrate and in contact with the first conductive portion, and a liner layer. The liner layer is between the first conductive portion and the interconnect structure, and between the second conductive portion and the substrate. The liner layer includes a portion extending parallel to a surface of the substrate.
Claims16
A method, comprising:
- forming a sacrificial structure in a substrate;
- forming a semiconductor layer over the sacrificial structure;
- forming an opening through the semiconductor layer to expose the sacrificial structure;
- forming a first conductive portion in the opening to interface with the sacrificial structure;
- and
- replacing the sacrificial structure with a second conductive portion.
A method, comprising:
- forming a sacrificial structure embedded in a substrate;
- forming a semiconductor layer over the sacrificial structure;
- forming an interconnect structure over the semiconductor layer;
- forming a first conductive portion extending through the interconnect structure to interface with the sacrificial structure;
- and
- replacing the sacrificial structure with a second conductive portion.
A method, comprising:
- forming a sacrificial structure embedded in a substrate and surrounded by a first liner;
- forming a semiconductor layer over the sacrificial structure on a first surface of the substrate;
- forming a first conductive portion extending through the semiconductor layer and surrounded by a second liner;
- removing the sacrificial structure from a second surface of the substrate opposite to the first surface, thereby exposing the first liner;
- and
- forming a second conductive portion over the exposed first liner.
Dependencies are inferred from the claim text.