Semiconductor structures with through via

A semiconductor structure, comprising:

• a substrate;
• a device layer over the substrate and comprising a device region;
• an interconnect structure over the device layer;
• and
• a through via extending through the substrate, the device layer, and the interconnect structure;
• and
• a guard ring surrounding the through via in a top view and extending through the device layer and the interconnect structure,
• wherein in the top view, the through via and the guard ring each have an elongated shape,
• wherein in the top view, the device region has a closest boundary to the guard ring and extending along a first direction,
• wherein the through via has a first length along the first direction and a second length along a second direction different from the first direction,
• wherein the first length is greater than the second length.

A semiconductor structure, comprising:

• a device layer comprising a memory region, and a control region adjacent to the memory region;
• an interconnect structure over the device layer;
• and
• a through via adjacent to a first boundary of the memory region and extending through the device layer and the interconnect structure,
• wherein the through via has an elongated shape having a first length along a first direction and a second length along a second direction different from the first direction,
• wherein the first length is greater than the second length,
• wherein the first boundary of the memory region is along the first direction.