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AssigneeBmstu
InventorsIlya Anatolevich RODIONOV, Daria Andreevna MOSKALEVA, Elizaveta Aleksandrovna KRIVKO, Nikita Sergeevich SMIRNOV
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The invention relates to the field of fabricating qubits and superconducting devices for quantum computers, and more particularly to systems based on thin-film Josephson junctions, and can be used for fine tuning, after fabrication, the resonance frequency of superconducting qubits containing thin-film Josephson junctions, for example adjustable-frequency or fixed-frequency qubits, as well as cryogenic Josephson parametric amplifiers. The essence of the invention is that in a method for fabricating superconducting qubits with focused ion beam annealing, which includes fabricating thin-film aluminium/aluminium-oxide/aluminium Josephson junctions (2) on a substrate (8), which are connected to two plates of a capacitor (3), and treating the superconducting qubits (1) by annealing the thin-film aluminium/aluminium-oxide/aluminium Josephson junctions (2), the superconducting qubits (1) are annealed with a Gaussian focused ion beam (13) by local changes in the properties of the thin-film aluminium/aluminium-oxide/aluminium Josephson junctions (2). The technical results of the invention consist in increasing the reproducibility of the resonance frequency tuning of any type of superconducting qubit and reducing the labour intensity and cost of the route for the fabrication of superconducting qubits and superconducting devices for quantum computers.
A method for fabricating superconducting qubits with focused ion beam annealing that involves manufacturing thin-film Al/AlOx/Al Josephson junctions (2) on a substrate (8), which are connected to two capacitor pads (3), and treating qubits (1) by annealing thin-film Al/ AlOx/Al Josephson junctions (2), characterized in that annealing is carried out by a Gaussian-shaped focused ion beam (13) by locally changing the properties of thin-film Al/AlOx/Al Josephson junctions (2).
(2) with a focused ion beam (13), the penetration depth of charged particles (14) in the volume of thin-film Al/AlOx/Al Josephson junctions (2) is adjusted by changing the irradiation dose within the range from 1×1011 to 5×1014 ion/cm2.
(2) with a focused ion beam (13), the energy of charged particles applied to the thin-film Al/AlOx/Al Josephson junctions (2) is specified for each treated region (11).
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