Display substrates and manufacturing methods thereof, display panels and display apparatuses

A display panel, comprising a display substrate comprising:

• a base;
• a light-emitting device layer located on the base, wherein a film layer farthest from the base in the light-emitting device layer is a light extraction layer;
• an encapsulation structure located on a side of the light-emitting device layer away from the base,
• wherein the encapsulation structure comprises a first inorganic encapsulation layer, an organic encapsulation layer located on a side of the first inorganic encapsulation layer away from the base, and a second inorganic encapsulation layer located on a side of the organic encapsulation layer away from the base;
• wherein the first inorganic encapsulation layer comprises a plurality of sub-film layers, a sub-film layer closest to the light extraction layer is a low-stress inorganic layer, and a stress of the low-stress inorganic layer is less than a stress of the second inorganic encapsulation layer;
• wherein the plurality of sub-film layers comprise at least one low-stress inorganic layer, the first inorganic encapsulation layer further comprises a first inorganic material layer located on a side of the at least one low-stress inorganic layer away from the base, and the first inorganic material layer is made of a material comprising a metal oxide;
• and
• wherein the first inorganic encapsulation layer further comprises a third inorganic material layer located between the first inorganic material layer and the at least one low-stress inorganic layer, and a compactness of the third inorganic material layer is greater than a compactness of the at least one low-stress inorganic layer.

A method of manufacturing a display substrate, comprising:

• preparing a base;
• forming a light-emitting device layer on the base, wherein a film layer farthest from the base in the light-emitting device layer is a light extraction layer;
• on a side of the light-emitting device layer away from the base, forming a first inorganic encapsulation layer, an organic encapsulation layer located on a side of the first inorganic encapsulation layer away from the base, and a second inorganic encapsulation layer located on a side of the organic encapsulation layer away from the base in sequence,
• wherein the first inorganic encapsulation layer comprises a plurality of sub-film layers, a sub-film layer closest to the light extraction layer is a low-stress inorganic layer, and a stress of the low-stress inorganic layer is less than a stress of the second inorganic encapsulation layer;
• wherein forming the first inorganic encapsulation layer comprises:
• forming at least one low-stress inorganic layer;
• forming a third inorganic material layer on a side of the at least one low-stress inorganic layer away from the base, and a compactness of the third inorganic material layer is greater than a compactness of the at least one low-stress inorganic layer;
• and
• forming a first inorganic material layer on a side of the third inorganic material layer away from the base through Atomic Layer Deposition, wherein the first inorganic material layer is made of a material comprising a metal oxide.