Semiconductor device

Abstract

A semiconductor device includes a semiconductor epitaxial structure and a first electrode. The semiconductor epitaxial structure includes a first semiconductor structure, an active structure and a second semiconductor structure. The first semiconductor structure includes a first semiconductor layer and a second semiconductor layer below the first semiconductor layer, and the first semiconductor layer has an upper surface including a first region and a second region. The active structure and the second semiconductor structure are located on the first region and do not overlap with the second region. The first electrode is located on the second region and directly contacts the first semiconductor layer. The first semiconductor layer is n-type and is the thickest layer within the first semiconductor structure, and the first semiconductor layer includes a ternary or quaternary arsenide, or a ternary or quaternary phosphide.

Dependencies are inferred from the claim text.