Light-emitting diode chip, semiconductor light-emitting device, and display device
AssigneeQuanzhou Sanan Semiconductor Technology Co., Ltd.
InventorsYi-Jui HUANG, Tsung-Ming LIN, Chung-Ying CHANG, Yu-Tsai TENG
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Abstract
A light-emitting diode (LED) chip includes a semiconductor epitaxial structure and a reflective structure. The reflective structure is formed on an upper surface and side surfaces of the semiconductor epitaxial structure. The reflective structure has a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from the semiconductor epitaxial structure. A semiconductor light-emitting device including the LED chip, and a display device including a plurality of the LED chips are also disclosed.
Claims20
A light-emitting diode (LED) chip, comprising:
- a substrate having a front surface;
- a semiconductor epitaxial structure formed on said front surface of said substrate and comprising a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked on one another in such order;
- and
- a reflective structure extending upwardly from said front surface of said substrate and formed on an upper surface and side surfaces of said semiconductor epitaxial structure, said reflective structure having a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from said semiconductor epitaxial structure, said reflective structure including a distributed Bragg reflector structure which has a reflectance of less than 10% for the light having the first wavelength,
- wherein the light having the first wavelength is a laser beam that is adapted for performing stealth dicing on said LED chip, and
- wherein the first wavelength of the laser beam ranges from 1000 nm to 1100 nm.
A light-emitting diode (LED) chip comprising:
- a substrate having a front surface;
- a semiconductor epitaxial structure formed on said front surface of said substrate and comprising a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked on one another in such order;
- and
- a reflective structure extending upwardly from said front surface of said substrate and formed on an upper surface and side surfaces of said semiconductor epitaxial structure, a part of said reflective structure disposed on said side surfaces of said semiconductor epitaxial structure forming an optical waveguide structure which has a reflectance of less than 10% for light having a first wavelength and entering said optical waveguide structure, the first wavelength being different from a wavelength of light emitted from said semiconductor epitaxial structure,
- wherein the light having the first wavelength is a laser beam that is adapted for performing stealth dicing on said LED chip, and
- wherein the first wavelength of the laser beam ranges from 1000 nm to 1100 nm.
A light-emitting diode (LED) chip, comprising:
- a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked on one another in such order;
- and
- a reflective structure formed on an upper surface and side surfaces of said semiconductor epitaxial structure and completely covering said side surfaces of said semiconductor epitaxial structure, said reflective structure having a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from said semiconductor epitaxial structure, said reflective structure including a distributed Bragg reflector structure which has a reflectance of less than 10% for the light having the first wavelength,
- wherein the light having the first wavelength is a laser beam that is adapted for performing stealth dicing on said LED chip, and
- wherein the first wavelength of the laser beam ranges from 1000 nm to 1100 nm.
Dependencies are inferred from the claim text.