Image sensor device and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Chien Hsieh, Yun-Wei Cheng, Wei-Li Hu, Kuo-Cheng Lee, Cheng-Ming Wu
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Abstract
An image sensor device and methods of forming the same are described. In some embodiments, the device includes a substrate, a contact pad structure extending from a contact pad region to a black level correction region, a dielectric layer disposed over the substrate in the black level correction region, and a light blocking structure disposed on and through the dielectric layer in the black level correction region. A first portion of the contact pad structure disposed in the black level correction region is in contact with the light blocking structure, and the light blocking structure is in contact with the substrate.
Claims20
An image sensor device, comprising:
- a substrate;
- a contact pad structure extending from a contact pad region to a black level correction region;
- a dielectric layer disposed over the substrate in the black level correction region;
- and
- a light blocking structure disposed on and through the dielectric layer in the black level correction region, wherein a first portion of the contact pad structure disposed in the black level correction region is in contact with the light blocking structure, and the light blocking structure is in contact with the substrate.
An image sensor device, comprising:
- a first dielectric layer;
- a substrate disposed over the first dielectric layer;
- a second dielectric layer disposed over the substrate;
- a first light blocking structure disposed over the substrate in a black level correction region;
- a second light blocking structure disposed over the substrate in an alignment mark region;
- a buffer oxide layer disposed over the first and second light blocking structures, wherein the buffer oxide layer extends from the black level correction region through a contact pad region to the alignment mark region;
- and
- a contact pad structure disposed on the buffer oxide layer, wherein the contact pad structure extends from the contact pad region to the black level correction region.
An image sensor device, comprising:
- a pixel array region;
- a black level correction region;
- and
- a contact pad region, wherein a contact pad structure extends continuously from the contact pad region to the black level correction region.
Dependencies are inferred from the claim text.