Image sensor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung CHENG, Szu-Yu WANG, Ching I LI, Yong-Sheng HUANG
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Abstract
A method includes forming a trench in a substrate from a front side of the substrate; forming a dielectric structure in the trench; forming an epitaxial silicon sealing layer over a front-side surface of the dielectric structure by a selective epitaxial growth process; forming a dielectric layer over a front side of the epitaxial silicon sealing layer; replacing the dielectric structure with a deep trench isolation structure from a back side of the substrate, wherein the epitaxial silicon sealing layer separates the dielectric layer from the deep trench isolation structure.
Claims20
A method of forming an image sensor, comprising:
- forming a trench in a substrate from a front side of the substrate;
- forming a dielectric structure in the trench;
- forming an epitaxial silicon sealing layer over a front-side surface of the dielectric structure by a selective epitaxial growth process;
- forming a dielectric layer over a front side of the epitaxial silicon sealing layer;
- and
- replacing the dielectric structure with a deep trench isolation structure from a back side of the substrate, wherein the epitaxial silicon sealing layer separates the dielectric layer from the deep trench isolation structure.
A method of forming an image sensor, comprising:
- forming a grid-shaped trench in a substrate from a front side of the substrate;
- forming a dielectric structure in the grid-shaped trench;
- recessing the dielectric structure to expose a sidewall of the substrate in the grid-shaped trench;
- and
- performing a selective epitaxial growth process to grow an epitaxial silicon sealing layer from the exposed sidewall of the substrate and over the recessed dielectric structure.
An image sensor, comprising:
- a substrate;
- a deep trench isolation structure in the substrate;
- an epitaxial silicon sealing layer over a front-side surface of the deep trench isolation structure;
- a dielectric layer over a front side of the epitaxial silicon sealing layer;
- and
- a semiconductor layer over a front side of the dielectric layer, wherein the epitaxial silicon sealing layer is between the semiconductor layer and the deep trench isolation structure.
Dependencies are inferred from the claim text.